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charge-trap flash-memory oxide thin film transistor

Based on

1 Articles
2014 Most recent source

Composition

1

n-doped Si

Type Complex Compound
Formula
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role current blocking layer
3

10 mol% Ag-doped ZrO2

Type Complex Compound
Formula
Role charge-trapping layer
4

indium sesquioxide

indium(III) oxide indium trioxide indium oxide
Type Single Compound
Formula In2O3
Role conducting channel
5

aluminium

aluminum
Type Single Compound
Formula Al
Role source
6

aluminium

aluminum
Type Single Compound
Formula Al
Role drain

Properties

General physical and chemical properties

Property Value Source
drain current

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Applications

Area Application Source
data storage

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Characterization

Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • silver nitrate
  • n-doped Si/SiO2
  • zirconyl nitrate hydrate
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Product

charge-trap flash-memory oxide thin film transistor

References

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