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indium oxide/zinc oxide/zinc gallate composite nanobelt field-effect transistor

Based on

1 Articles
2014 Most recent source

Composition

1

n-doped silicon

n-Si
Type Complex Compound
Formula
Role substrate
2

magnesia/bismuth zinc niobium oxide composite

Type Complex Compound
Formula
Role gate dielectrics
3

indium oxide/zinc oxide/zinc gallate composite nanobelt network

Type
Formula
Role
4

aluminium

aluminum
Type Single Compound
Formula Al
Role source
5

aluminium

aluminum
Type Single Compound
Formula Al
Role drain

Properties

General physical and chemical properties

Property Value Source
drain current

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Applications

Area Application Source
electronics

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Characterization

Method Source
optical microscopy

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Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • n-doped silicon
  • magnesia/bismuth zinc niobium oxide composite
Product

indium oxide/zinc oxide/zinc gallate composite nanobelt field-effect transistor

References

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