Loading ...

poly({9-(2-(2-(2-methoxyethoxy)ethoxy)ethyl)-9H-carbazole-3,6-diyl}ethynylene)-functionalized single-walled carbon nanotube-based field effect transistor

Based on

1 Articles
2015 Most recent source

Composition

1

heavily doped (n-type) silicon

Type Complex Compound
Formula
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

poly({9-(2-(2-(2-methoxyethoxy)ethoxy)ethyl)-9H-carbazole-3,6-diyl}ethynylene)-functionalized single-walled carbon nanotube film

Tg-Car/single-walled CNT film Tg-Car/carbon nanotube film Tg-Car/CNT composite film Tg-Car/CNT film
Type Nano Material
Formula
Role channels
4

chromium/gold film

Au/Cr layer Cr/Au film
Type Nano Material
Formula
Role source
5

chromium/gold film

Au/Cr layer Cr/Au film
Type Nano Material
Formula
Role drain

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
charge carrier mobility under illumination

More information/entries available to subscribers only.

Or, view sample content

Applications

Area Application Nanomaterial Variant Source
electronics

More information/entries available to subscribers only.

Or, view sample content

Characterization

Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • heavily doped (n-type) silicon with oxide layer
  1. jepGrLQ
Product

poly({9-(2-(2-(2-methoxyethoxy)ethoxy)ethyl)-9H-carbazole-3,6-diyl}ethynylene)-functionalized single-walled carbon nanotube-based field effect transistor

Size: not specified

Medium/Support: none

References

Full content is available to subscribers only

To view content please choose from the following:

We use cookies to improve your experience with our site. More information

Sign up for a free trial