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InAs0.8P0.2 alloy nanowire photodetector

Based on

1 Articles
2014 Most recent source

Composition

1

p-doped silicon

p+-Si
Type Complex Compound
Formula
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

InAs0.8P0.2 alloy nanowire

InAs0.8P0.2 NW
Type Nano Material
Formula
Role semiconductor layer
4

chromium

Type Single Compound
Formula Cr
Role adhesion layer
5

gold

Type Single Compound
Formula Au
Role source
6

gold

Type Single Compound
Formula Au
Role drain

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
electric current dependent on darkness

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Sensor properties

Type of sensor Sensor property Nanomaterial Variant Source
light sensor

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Applications

Area Application Nanomaterial Variant Source
electronics

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Characterization

Method Nanomaterial Variant Source
field emission scanning electron microscopy

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Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
Product

InAs0.8P0.2 alloy nanowire photodetector

Size: not specified

Medium/Support: none

References

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