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titanium-oxide-based metal-insulator transition switching device

Based on

1 Articles
2015 Most recent source

Composition

1

Si/SiO2

Type Complex Compound
Formula
Role substrate
2

silicon nitride

Type Single Compound
Formula Si3N4
Role isolation layer
3

titanium nitride

nc-TiN
Type Single Compound
Formula TiN
Role bottom electrode (BE)
4

titanium(IV) oxide

titanium dioxide titanium oxide titania
Type Single Compound
Formula TiO2
Role isolation layer
5

titanium oxide

titania TixOy
Type Single Compound
Formula TiO(x)
Role switching layer
6

tantalum oxide/tantalum

TaO2-x/Ta
Type Complex Compound
Formula
Role oxygen absorption layer
7

titanium nitride

nc-TiN
Type Single Compound
Formula TiN
Role top electrode (TE)

Properties

General physical and chemical properties

Property Value Source
electric current

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Applications

Area Application Source
data storage

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Characterization

Method Source
transmission electron microscopy

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Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • silicon nitride
  • Si/SiO2
Product

titanium-oxide-based metal-insulator transition switching device

References

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