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single indium oxide/zinc oxide/zinc gallate composite nanofiber field-effect transistor

Based on

1 Articles
2014 Most recent source

Composition

1

n-doped silicon

n-Si
Type Complex Compound
Formula
Role substrate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

indium oxide/zinc oxide/zinc gallate composite nanofibers

Type
Formula
Role
4

aluminium

aluminum
Type Single Compound
Formula Al
Role source
5

aluminium

aluminum
Type Single Compound
Formula Al
Role drain

Properties

General physical and chemical properties

Property Value Source
drain current

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Applications

Area Application Source
electronics

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Characterization

Method Source
optical microscopy

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Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • gallium(III) chloride
  • zinc acetate dihydrate
  • silica thin film on n-doped silicon wafer
See all (4)
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  2. 8CNYeIG9AgsaVb
Product

single indium oxide/zinc oxide/zinc gallate composite nanofiber field-effect transistor

Method 2

Type: Chemical synthesis
Source:
Starting materials
  • gallium(III) chloride
  • zinc acetate dihydrate
  • silica thin film on n-doped silicon wafer
See all (4)
  1. qLUb3koeGQQDsXHdqD6wyYqbUg
  2. txSRJnXwYxE2u7
Product

single indium oxide/zinc oxide/zinc gallate composite nanofiber field-effect transistor

Method 3

Type: Chemical synthesis
Source:
Starting materials
  • gallium(III) chloride
  • zinc acetate dihydrate
  • silica thin film on n-doped silicon wafer
See all (4)
  1. 5WU4DjYYSkA1ddzDbocXwcfdaq
  2. WBfMW3xCVsTgyV
Product

single indium oxide/zinc oxide/zinc gallate composite nanofiber field-effect transistor

References

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