Loading ...

charge-trap flash-memory oxide thin film transistor

Based on

1 Articles
2014 Most recent source

Composition

1

n-doped Si

Type Complex Compound
Formula
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role current blocking layer
3

5 mol% Cu-doped ZrO2

5 mol% Cu-doped ZrO2
Type Complex Compound
Formula
Role charge-trapping layer
4

indium sesquioxide

indium(III) oxide indium trioxide indium oxide
Type Single Compound
Formula In2O3
Role conducting channel
5

aluminium

aluminum
Type Single Compound
Formula Al
Role source
6

aluminium

aluminum
Type Single Compound
Formula Al
Role drain

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
drain current

More information/entries available to subscribers only.

Or, view sample content

Applications

Area Application Nanomaterial Variant Source
data storage

More information available to subscribers only.

Or, view sample content

Characterization

Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • cadmium(II) nitrate tetrahydrate
  • n-doped Si/SiO2
  • zirconyl nitrate hydrate
  1. NzQjBhxVOeFi7IFTrDCWJmo3X
Product

charge-trap flash-memory oxide thin film transistor

Size: not specified

Medium/Support: none

Method 2

Type: Chemical synthesis
Source:
Starting materials
  • copper(II) nitrate hydrate
  • n-doped Si/SiO2
  • zirconyl nitrate hydrate
  1. eBxVSZfCuq8pxWw1LMNvDezxv
Product

charge-trap flash-memory oxide thin film transistor

Size: not specified

Medium/Support: none

Method 3

Type: Chemical synthesis
Source:
Starting materials
  • copper(II) nitrate hydrate
  • n-doped Si/SiO2
  • zirconyl nitrate hydrate
  1. RDHNuzDHDDYBwbggyRwPdEXcI
Product

charge-trap flash-memory oxide thin film transistor

Size: not specified

Medium/Support: none

Method 4

Type: Chemical synthesis
Source:
Starting materials
  • cobalt(II) nitrate hexahydrate
  • n-doped Si/SiO2
  • zirconyl nitrate hydrate
  1. l78qS2ExW363dvSgUcF9jRvqH
Product

charge-trap flash-memory oxide thin film transistor

Size: not specified

Medium/Support: none

Method 5

Type: Chemical synthesis
Source:
Starting materials
  • copper(II) nitrate hydrate
  • n-doped Si/SiO2
  • zirconyl nitrate hydrate
  1. BkjeygFsdZjCV7auUNPXV7Doo
Product

charge-trap flash-memory oxide thin film transistor

Size: not specified

Medium/Support: none

References

Full content is available to subscribers only

To view content please choose from the following:

We use cookies to improve your experience with our site. More information

Sign up for a free trial