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molybdenum sulfide-based bottom-gated field-effect transistor

Based on

1 Articles
2016 Most recent source

Composition

1

octadecyltrimethoxysilane/silica-coated silicon

OTMS/SiO2-coated Si
Type Complex Compound
Formula
Role substrate
2

molybdenum disulfide nanoflakes

MoS2 nanoflakes
Type
Formula
Role
3

gold

Type Single Compound
Formula Au
Role electrodes

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
charge carrier density dependent on temperature

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Applications

Area Application Nanomaterial Variant Source
electronics

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Characterization

Method Nanomaterial Variant Source
atomic force microscopy

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Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • molybdenum(VI) oxide
  1. C22JDbafWxNr1LZXm9ugEslDcJqcRYHgxP8l9OGOuD
  2. YhU8ZWK7qjjtg
  3. wTqCBFZT8o
Product

molybdenum sulfide-based bottom-gated field-effect transistor

Size: not specified

Medium/Support: none

References

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