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single-walled carbon nanotube-based back-gated field effect transistor

Based on

1 Articles
2016 Most recent source

Composition

1

silicon

Type Single Compound
Formula Si
Role substrate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role insulating layer
3

semiconducting single-walled carbon nanotubes

single-walled carbon nanotubes single walled carbon nanotubes single-wall carbon nanotubes sc-SWCNT SW-CNT SWCNT SWNT
Type Nano Material
Formula
Role channels
4

gold/titanium

Au/Ti
Type Complex Compound
Formula
Role source
5

gold/titanium

Au/Ti
Type Complex Compound
Formula
Role drain
6

methyl methacrylate resin

methyl methacrylate resin PMMA
Type Polymer
Formula
Role passivation layer
7

hydrogen silsesquioxane monomer

hydrogen silsesquioxane octasilsesquioxane XR-1541-002 Fox-16 HSQ
Type Single Compound
Formula H8Si8O12
Role passivation layer

Properties

General physical and chemical properties

Property Value Source
drain current

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Applications

Area Application Source
electronics

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Characterization

Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • silicon dioxide
  • silicon
Product

single-walled carbon nanotube-based back-gated field effect transistor

Method 2

Type: Physical formation
Source:
Starting materials
  • silicon dioxide
  • silicon
Product

single-walled carbon nanotube-based back-gated field effect transistor

References

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