Loading ...

Fast insight into nanotechnology

Access easily searchable nanoscience data, synthesis methods and literature

single-walled carbon nanotube-based back-gated field effect transistor

Based on

1 Articles
2016 Most recent source

Composition

1

silicon

Type Single Compound
Formula Si
Role substrate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role insulating layer
3

single-walled carbon nanotubes

single-walled carbon nanotubes single-wall carbon nanotubes SWCNT SWNT
Type Nano Material
Formula
Role channels
4

gold/titanium

Au/Ti
Type Complex Compound
Formula
Role source
5

gold/titanium

Au/Ti
Type Complex Compound
Formula
Role drain
6

methyl methacrylate resin

methyl methacrylate resin PMMA
Type Polymer
Formula
Role passivation layer
7

hydrogen silsesquioxane monomer

hydrogen silsesquioxane octasilsesquioxane XR-1541-002 Fox-16 HSQ
Type Single Compound
Formula H8O12Si8
Role passivation layer

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
drain current

More information available to subscribers only.

Or, view sample content

Applications

Area Application Nanomaterial Variant Source
electronics

More information available to subscribers only.

Or, view sample content

Characterization

Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • silicon dioxide
  • silicon
Product

single-walled carbon nanotube-based back-gated field effect transistor

Size: not specified

Medium/Support: none

Method 2

Type: Physical formation
Source:
Starting materials
  • silicon dioxide
  • silicon
Product

single-walled carbon nanotube-based back-gated field effect transistor

Size: not specified

Medium/Support: none

References

Full content is available to subscribers only

To view content please choose from the following:

We use cookies to improve your experience with our site. More information

Sign up for a free trial