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dual-gated bilayer MoS2 field-effect transistor

Based on

1 Articles
2015 Most recent source

Composition

1

heavily doped silicon

silicon
Type Single Compound
Formula Si
Role back-gate electrode
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role back-gate dielectrics
3

molybdenum disulfide nanosheets

molybdenum sulfide nanosheets bilayer molybdenum disulfide molybdenum sulfide bilayer two-layer MoS2 nanosheets bilayer MoS2 nanosheets bilayered MoS2 flakes two-dimensional MoS2 bilayer MoS2 sheets bilayer MoS2 film 2-monolayer MoS2 MoS2 nanosheets MoS2 nanoflakes bi-layer MoS2 bilayer MoS2 MoS2 bilayer MoS2 flakes MoS2 sheets 2L-MoS2 2L MoS2
Type
Formula
Role
4

Ni/Au

Type Nano Material
Formula
Role source
5

hafnium(IV) oxide

hafnium dioxide hafnium oxide hafnia
Type Single Compound
Formula HfO2
Role top gate dielectric
6

Ni/Au

Type Nano Material
Formula
Role drain
7

hydrogen silsesquioxane monomer

hydrogen silsesquioxane octasilsesquioxane XR-1541-002 Fox-16 HSQ
Type Single Compound
Formula H8O12Si8
Role buffer layer
8

Ti/Au

Type Nano Material
Formula
Role top gate electrode

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
band gap change

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Applications

Area Application Nanomaterial Variant Source
electronics

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Characterization

Method Nanomaterial Variant Source
photoluminescence

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Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • silicon dioxide
  • molybdenum(IV) sulfide
  • heavily doped silicon
Product

dual-gated bilayer MoS2 field-effect transistor

Size: not specified

Medium/Support: none

References

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