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microelectromechanical system switch/thin film transistor-based inverter

Based on

1 Articles
2015 Most recent source

Composition

1

soda-lime-silica glass

soda-lime glass glass
Type Complex Compound
Formula
Role substrate
2

tin-doped indium oxide

indium tin oxide ITO
Type Complex Compound
Formula
Role gate
3

aluminium oxide

aluminum oxide alumina
Type Single Compound
Formula Al2O3
Role gate insulator
4

tin-doped indium oxide

indium tin oxide ITO
Type Complex Compound
Formula
Role source
5

tin-doped indium oxide

indium tin oxide ITO
Type Complex Compound
Formula
Role drain
6

n-type oxide film

IGZO film
Type Nano Material
Formula
Role photoactive layer
7

aluminium oxide

aluminum oxide alumina
Type
Formula Al2O3
Role
8

tin-doped indium oxide

indium tin oxide ITO
Type Complex Compound
Formula
Role gate
9

benzocyclobutene

BCB
Type Single Compound
Formula C8H8
Role insulators
10

Cr/Au film

Type Nano Material
Formula
Role electrodes
11

gold

Type
Formula Au
Role
12

nickel

Type
Formula Ni
Role

Properties

General physical and chemical properties

Property Value Source
detaching voltage

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Applications

Area Application Source
electronics

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Characterization

Method Source
optical microscopy

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Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • indium tin oxide glass
  • aluminium oxide
  1. W2mcS6
Product

microelectromechanical system switch/thin film transistor-based inverter

References

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