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In2O3 semiconductor-based FET

Based on

1 Articles
2015 Most recent source

Composition

1

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
2

boron p-doped silicon

boron-doped silicon
Type Complex Compound
Formula
Role gate
3

indium sesquioxide

indium(III) oxide indium trioxide indium oxide
Type Single Compound
Formula In2O3
Role channels
4

Au/Cr

Type Complex Compound
Formula
Role source
5

Au/Cr

Type Complex Compound
Formula
Role drain

Properties

General physical and chemical properties

Property Value Source

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Applications

Characterization

Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • silicon dioxide
  • silicon
  • indium(III) nitrate hydrate
  1. UILl4A0qAzmmJ1Eo
Product

In2O3 semiconductor-based FET

References

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