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In0.65Ga0.35As/In0.53Ga0.47As gate-all-around nanowire transistor

Based on

1 Articles
2015 Most recent source

Composition

1

indium(III) phosphide

indium phosphide
Type Single Compound
Formula InP
Role substrate
2

indium aluminium arsenide

InAlAs
Type Complex Compound
Formula
Role etch-stop layer
3

indium(III) phosphide

indium phosphide
Type Single Compound
Formula InP
Role sacrificial layer
4

InGaAs nanowires

InGaAs NW
Type Nano Material
Formula
Role channels
5

Au/Ge/Ni

Type Complex Compound
Formula
Role drain
6

Au/Ge/Ni

Type Complex Compound
Formula
Role source
7

Cr/Au

Type Complex Compound
Formula
Role gate

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
band gap dependent on temperature

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Applications

Area Application Nanomaterial Variant Source
electronics

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Characterization

Method Nanomaterial Variant Source
scanning electron microscopy

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Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
Product

In0.65Ga0.35As/In0.53Ga0.47As gate-all-around nanowire transistor

Size: not specified

Medium/Support: none

Method 2

Type: Physical formation
Source:
Starting materials
Product

In0.65Ga0.35As/In0.53Ga0.47As gate-all-around nanowire transistor

Size: not specified

Medium/Support: none

References

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