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gate-controlled graphene-electrode resistive random access memory

Based on

1 Articles
2015 Most recent source

Composition

1

silicon

Type Single Compound
Formula Si
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

bilayer graphene

BLG
Type
Formula
Role
4

aluminium

aluminum
Type Single Compound
Formula Al
Role top electrode
5

substoichiometric aluminum oxide

noncrystalline aluminum oxide anodized aluminum oxide aluminium suboxide oxidized aluminium aluminium oxide aluminum oxide alumina
Type Single Compound
Formula AlO(x)
Role resistive switching layer
6

chromium

Type Single Compound
Formula Cr
Role bottom electrode
7

gold

Type Single Compound
Formula Au
Role bottom electrode

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
electric current dependent on gate voltage

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Applications

Area Application Nanomaterial Variant Source
data storage

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Characterization

Method Nanomaterial Variant Source
atomic force microscopy

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Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • methane
  1. SmEc2wp4rYIm2nMcis
  2. rQJZyQojUBYAgsQWcr38PiChNJc9QH
Product

gate-controlled graphene-electrode resistive random access memory

Size: not specified

Medium/Support: none

Method 2

Type: Chemical synthesis
Source:
Starting materials
  • methane
  1. uMOTdY0PK679gfa8r4
  2. cYPZmR64ccGWtkI7uYjMXQRbf8u5nC
Product

gate-controlled graphene-electrode resistive random access memory

Size: not specified

Medium/Support: none

Method 3

Type: Chemical synthesis
Source:
Starting materials
  • methane
  1. hyt1yuMuQUdrufA6R0
  2. RBLuDAUzCogobMP4MDZjuVDFiO85gP
Product

gate-controlled graphene-electrode resistive random access memory

Size: not specified

Medium/Support: none

References

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