Loading ...

Fast insight into nanotechnology

Access easily searchable nanoscience data, synthesis methods and literature

metal-oxide semiconductor inverter fabricated with p-MoSe2 and n-MoSe2 FET

Based on

1 Articles
2015 Most recent source

Composition

1

silicon

Type Single Compound
Formula Si
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

exfoliated p-MoSe2 flakes

thin layers of p-MoSe2 few-layered p-MoSe2 exfoliated p-MoSe2 p-MoSe2 crystals Nb-doped MoSe2 p-MoSe2 flakes p-MoSe2
Type Nano Material
Formula
Role channel layer
4

thin layers of n-MoSe2

few-layered n-MoSe2 n-MoSe2 crystals n-MoSe2 flakes n-MoSe2
Type Nano Material
Formula
Role channel layer
5

chromium/gold

Type Complex Compound
Formula
Role source
6

chromium/gold

Type Complex Compound
Formula
Role drain
7

chromium/gold

Type Complex Compound
Formula
Role source
8

chromium/gold

Type Complex Compound
Formula
Role drain

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
gain value

More information/entries available to subscribers only.

Or, view sample content

Applications

Area Application Nanomaterial Variant Source
tools/devices

More information available to subscribers only.

Or, view sample content

Characterization

Method Nanomaterial Variant Source
optical microscopy

More information available to subscribers only.

Or, view sample content

Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • silicon/silica
  1. nB6ep8rKAwaT
Product

metal-oxide semiconductor inverter fabricated with p-MoSe2 and n-MoSe2 FET

Size: not specified

Medium/Support: none

References

Full content is available to subscribers only

To view content please choose from the following:

We use cookies to improve your experience with our site. More information

Sign up for a free trial