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phase change memory device

Based on

1 Articles
2015 Most recent source

Composition

1

silicon

Type Single Compound
Formula Si
Role electrodes
2

silicon dioxide

silicic oxide silica
Type
Formula SiO2
Role
3

titanium nitride

Type Single Compound
Formula TiN
Role electrodes
4

germanium antimony telluride

Ge-Sb-Te ternary alloy Ge2Sb2Te5 GST
Type
Formula Ge2Sb2Te5
Role
5

silicon nitride

Type Single Compound
Formula Si3N4
Role blanket layer

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
current density dependent on GST phase

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Applications

Area Application Nanomaterial Variant Source
tools/devices

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Characterization

Method Nanomaterial Variant Source
optical microscopy

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Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • Si/SiO2
  1. gySQCSoWRX5gH4E1OM
Product

phase change memory device

Size: not specified

Medium/Support: none

References

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