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back-gated field-effect transistor made from multilayer MoS2 flakes

Based on

1 Articles
2015 Most recent source

Composition

1

p-doped silicon

p-type silicon p-type Si silicon
Type Single Compound
Formula Si
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

multilayer structures of MoS2

multilayer MoS2 flake array multilayer MoS2 structures MoS2 flake array MoS2 flakes
Type Nano Material
Formula
Role channel layer
4

titanium/gold

Type Complex Compound
Formula
Role source
5

titanium/gold

Type Complex Compound
Formula
Role drain

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
drain current

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Applications

Area Application Nanomaterial Variant Source
electronics

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Characterization

Method Nanomaterial Variant Source
optical microscopy

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Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  1. VSP3gX7ILMawwFgG
Product

back-gated field-effect transistor made from multilayer MoS2 flakes

Size: not specified

Medium/Support: none

Method 2

Type: Chemical synthesis
Source:
Starting materials
  1. PCLvJQV9MJr58nSs
Product

back-gated field-effect transistor made from multilayer MoS2 flakes

Size: not specified

Medium/Support: none

References

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