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random-network single walled carbon nanotubes field-effect transistor

Based on

1 Articles
2015 Most recent source

Composition

1

p-doped silicon

Type Complex Compound
Formula
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

random-network single walled carbon nanotubes

random-network SWCNT
Type Nano Material
Formula
Role channels
4

titanium

Type Single Compound
Formula Ti
Role adhesion layer
5

palladium

Type Single Compound
Formula Pd
Role source
6

palladium

Type Single Compound
Formula Pd
Role drain

Properties

General physical and chemical properties

Property Value Source
current density

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Applications

Area Application Source
electronics

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Characterization

Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • p-Si/SiO2
  1. yrNF7Kmc89FyxzmI8cFgI
Product

random-network single walled carbon nanotubes field-effect transistor

Method 2

Type: Physical formation
Source:
Starting materials
  • p-Si/SiO2
  1. 6IqytW3M4m9MekeQuvn11
Product

random-network single walled carbon nanotubes field-effect transistor

Method 3

Type: Physical formation
Source:
Starting materials
  • p-Si/SiO2
  1. ZurSLZNoUtdon3NHoPOBr
  2. dJcH8
  3. MC0j
Product

random-network single walled carbon nanotubes field-effect transistor

Method 4

Type: Physical formation
Source:
Starting materials
  • p-Si/SiO2
  1. 00qigfomkoThw7xF78fum
  2. MTNK1
  3. KBIU
Product

random-network single walled carbon nanotubes field-effect transistor

Method 5

Type: Physical formation
Source:
Starting materials
  • p-Si/SiO2
  1. rBu9jG5VJXGcOk6EufulA
  2. rYfSc
  3. hD07
Product

random-network single walled carbon nanotubes field-effect transistor

References

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