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N-DMBI-doped graphene transistor

Based on

1 Articles
2014 Most recent source

Composition

1

phosphorus-doped amorphous silicon

n-Si n+Si
Type Complex Compound
Formula
Role substrate
2

silicon dioxide

silicic oxide silica
Type
Formula SiO2
Role
3

N-DMBI doped graphene nanoribbons

GR
Type Nano Material
Formula
Role active layer
4

Ti/Au

Type Nano Material
Formula
Role source
5

Ti/Au

Type Nano Material
Formula
Role drain

Properties

General physical and chemical properties

Property Value Source
Dirac point

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Applications

Area Application Source
electronics

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Characterization

Method Source
scanning electron microscopy

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Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • silicon dioxide
  • graphene
  • phosphorus-doped amorphous silicon
Product

N-DMBI-doped graphene transistor

Method 2

Type: Physical formation
Source:
Starting materials
  • silicon dioxide
  • graphene
  • phosphorus-doped amorphous silicon
Product

N-DMBI-doped graphene transistor

Method 3

Type: Physical formation
Source:
Starting materials
  • silicon dioxide
  • graphene
  • phosphorus-doped amorphous silicon
Product

N-DMBI-doped graphene transistor

References

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