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single-walled carbon nanotube complementary metal oxide semiconductor inverter

Based on

1 Articles
2014 Most recent source

Composition

1

poly(dimethylsiloxane)

polydimethylsiloxane PDMS
Type Polymer
Formula
Role substrate
2

chromium/silica bilayer

Cr/SiO2 bilayer
Type Nano Material
Formula
Role adhesion layer
3

polyamic acid

Type
Formula
Role
4

titanium

Type Single Compound
Formula Ti
Role adhesion layer
5

gold

Type Single Compound
Formula Au
Role gate
6

polyvinylpyrrolidone

PVP
Type Polymer
Formula
Role gate dielectrics
7

β-nicotinamide adenine dinucleotide-coated single-walled carbon nanotubes

NADH-coated SWCNT
Type Nano Material
Formula
Role semiconductor layer
8

palladium

Type Single Compound
Formula Pd
Role source
9

palladium

Type Single Compound
Formula Pd
Role drain

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
drain current dependent on drain voltage

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Applications

Area Application Nanomaterial Variant Source
electronics

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Characterization

Method Nanomaterial Variant Source
optical microscopy

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Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • polyamic acid
  1. pE2Oi30IDCePTAwcoD4EbHQw6D1l
Product

single-walled carbon nanotube complementary metal oxide semiconductor inverter

Size: not specified

Medium/Support: none

References

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