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dual-gated single layer MoS2 field-effect transistor

Based on

1 Articles
2015 Most recent source

Composition

1

heavily doped silicon

silicon
Type Single Compound
Formula Si
Role back-gate electrode
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role back-gate dielectrics
3

molybdenum sulfide thin film

monolayer MoS2 thin film monolayer MoS2
Type
Formula
Role
4

Ni/Au

Type Nano Material
Formula
Role source
5

hafnium(IV) oxide

hafnium dioxide hafnium oxide hafnia
Type Single Compound
Formula HfO2
Role top gate dielectric
6

Ni/Au

Type Nano Material
Formula
Role drain
7

aluminium oxide

aluminum oxide alumina
Type Single Compound
Formula Al2O3
Role buffer layer
8

Ti/Au

Type Nano Material
Formula
Role top gate electrode

Properties

General physical and chemical properties

Property Value Source
band gap

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Applications

Area Application Source
electronics

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Characterization

Method Source
optical microscopy

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Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • silicon dioxide
  • molybdenum(IV) sulfide
  • heavily doped silicon
Product

dual-gated single layer MoS2 field-effect transistor

References

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