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vertically stacked p-n MoSe2 diode

Based on

1 Articles
2015 Most recent source

Composition

1

silicon

Type Single Compound
Formula Si
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

thin layers of n-MoSe2

few-layered n-MoSe2 n-MoSe2 crystals n-MoSe2 flakes n-MoSe2
Type
Formula
Role
4

exfoliated p-MoSe2 flakes

thin layers of p-MoSe2 few-layered p-MoSe2 exfoliated p-MoSe2 p-MoSe2 crystals Nb-doped MoSe2 p-MoSe2 flakes p-MoSe2
Type
Formula
Role
5

chromium/gold

Type Complex Compound
Formula
Role source
6

chromium/gold

Type Complex Compound
Formula
Role drain

Properties

General physical and chemical properties

Property Value Source
drain current dependent on gate voltage

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Applications

Area Application Source
electronics

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Characterization

Method Source
optical microscopy

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Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • silicon/silica
  1. scD9IzI0M2TL
Product

vertically stacked p-n MoSe2 diode

References

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