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zone-cast pentacene film-based top contact thin film transistor

Based on

1 Articles
2015 Most recent source

Composition

1

highly-doped silicon

Type Complex Compound
Formula
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

divinylsiloxane-bisbenzocyclobutene polymer

Type Polymer
Formula
Role gate dielectrics
4

zone-cast pentacene film

ZCPEN film
Type Nano Material
Formula
Role channels
5

gold

Type Single Compound
Formula Au
Role source
6

gold

Type Single Compound
Formula Au
Role drain

Properties

General physical and chemical properties

Property Value Source
drain current dependent on treatment regime

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Applications

Area Application Source
electronics

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Characterization

Method Source
Raman spectroscopy dependent on time after gate bias stress

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Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • divinyltetramethyldisiloxane bis(benzocyclobutene) monomer
  • silica layer on highly-doped silicon
Product

zone-cast pentacene film-based top contact thin film transistor

References

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