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CH3NH3PbI3 perovskite-graphene hybrid photodetector

Based on

1 Articles
2015 Most recent source

Composition

1

heavily n-doped Si

Type Complex Compound
Formula
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

n-octadecyltrimethoxylsilane

n-octadecyltrimethoxysilane trimethoxy(octadecyl)silane noctadecyltrimethoxysilane octadecyltrimethoxy silane octadecyltrimethoxylsilane octadecyltrimethoxysilane trimethoxyoctadecylsilane C18TMOS C18TMS C18TMS n-ODMS ODTMS OTMOS ODMS ODTS OTMS TMOS ODS OTS TMS
Type Single Compound
Formula C18H37Si(OCH3)3
Role passivation layer
4

Cr/Au film

Type Nano Material
Formula
Role source
5

Cr/Au film

Type Nano Material
Formula
Role drain
6

single-layer graphene

graphene film graphene
Type Nano Material
Formula
Role channels
7

methylammonium lead iodide film

CH3NH3PbI3 film
Type Nano Material
Formula
Role light absorbing layer

Properties

General physical and chemical properties

Property Value Source
drain dark current

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Sensor properties

Type of sensor Sensor property Source
light sensor for 520 nm

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Applications

Area Application Source
sensors (excluding biosensors)

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Characterization

Method Source
optical microscopy

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Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • heavily n-doped Si
  • air
Product

CH3NH3PbI3 perovskite-graphene hybrid photodetector

References

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