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WSe2-based complementary metal-oxide semiconductor inverter

Based on

1 Articles
2014 Most recent source

Composition

1

silicon

Type Single Compound
Formula Si
Role substrate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

tungsten(IV) selenide

tungsten diselenide tungsten selenide
Type Single Compound
Formula WSe2
Role channels
4

Pt/Au/Pd electrode

Type Nano Material
Formula
Role source
5

Pt/Au/Pd electrode

Type Nano Material
Formula
Role drain
6

zirconium(IV) oxide

zirconium dioxide zirconia
Type Single Compound
Formula ZrO2
Role gate
7

Ni/Au electrode

Ni/Au film
Type Nano Material
Formula
Role electrodes
8

gold

Type Single Compound
Formula Au
Role contacts
9

K-doped Pt/Au/Pd electrode

Type Nano Material
Formula
Role source
10

K-doped Pt/Au/Pd electrode

Type Nano Material
Formula
Role drain

Properties

General physical and chemical properties

Property Value Source
direct current voltage gain

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Applications

Area Application Source
electronics

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Characterization

Method Source
scanning electron microscopy

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Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • tungsten(IV) selenide
  • Si/SiO2
  1. Qmn3c1OYYk
Product

WSe2-based complementary metal-oxide semiconductor inverter

References

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