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GaN-Al2O3-MoS2 vertical heterojunction

Based on

1 Articles
2015 Most recent source

Composition

1

sapphire

Type Single Compound
Formula Al2O3
Role substrate
2

p-doped gallium nitride

p-GaN
Type Complex Compound
Formula
Role p-type semiconducting layer
3

aluminium oxide

aluminum oxide alumina
Type Single Compound
Formula Al2O3
Role dielectric layer
4

molybdenum disulfide bilayer

MoS2 bilayer MoS2 flake 2 L MoS2
Type Nano Material
Formula
Role n-type semiconductor layer
5

aluminium oxide

aluminum oxide alumina
Type Single Compound
Formula Al2O3
Role dielectric layer
6

nickel

Type Single Compound
Formula Ni
Role adhesion layer
7

gold

Type Single Compound
Formula Au
Role electrodes
8

palladium

Type Single Compound
Formula Pd
Role adhesion layer

Properties

General physical and chemical properties

Property Value Source
electron population fraction at Κ valley

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Applications

Area Application Source
optoelectronics

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Characterization

Method Source
electroluminescence

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Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
Product

GaN-Al2O3-MoS2 vertical heterojunction

Method 2

Type: Physical formation
Source:
Starting materials
Product

GaN-Al2O3-MoS2 vertical heterojunction

Method 3

Type: Physical formation
Source:
Starting materials
Product

GaN-Al2O3-MoS2 vertical heterojunction

References

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