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Ge/Si nanowire-based field effect transistor

Based on

1 Articles
2014 Most recent source

Composition

1

B-doped Si

p-Si
Type Complex Compound
Formula
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

Ge/Si core/shell nanowires

Ge/Si core/shell NW
Type
Formula
Role
4

hafnium(IV) oxide

hafnium dioxide hafnium oxide hafnia
Type Single Compound
Formula HfO2
Role passivation layer
5

nickel

Type Single Compound
Formula Ni
Role source
6

nickel

Type Single Compound
Formula Ni
Role drain

Properties

General physical and chemical properties

Property Value Source

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Applications

Area Application Source

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Characterization

Method Source

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Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
Product

Ge/Si nanowire-based field effect transistor

References

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