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pentacene-based OFET memory device with C60:c-PVP single floating-gate

Based on

1 Articles
2015 Most recent source

Composition

1

soda-lime-silica glass

soda-lime glass glass
Type Complex Compound
Formula
Role substrate
2

tin-doped indium oxide

indium tin oxide ITO
Type Complex Compound
Formula
Role gate
3

3-aminopropyl-triethoxysilane-modified HfO2

APTES-modified HfO2
Type Complex Compound
Formula
Role gate dielectrics
4

octadecyltrichlorosilane-modified C60-loaded 4,4'-(hexafluoroisopropylidene)diphthalic anhydride-crosslinked poly(4-vinylphenol)

ODTS-modified C60-loaded HDA-crosslinked PVP ODTS-modified C60:c-PVP
Type Nano Material
Formula
Role floating gate
5

pentacene

PEN Pen Pc Pe
Type Single Compound
Formula C22H14
Role semiconducting channel
6

gold

Type Single Compound
Formula Au
Role source
7

gold

Type Single Compound
Formula Au
Role drain

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
drain current dependent on memory state

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Applications

Area Application Nanomaterial Variant Source
data storage

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Characterization

Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • hafnium(IV) oxide
  • indium tin oxide glass
Product

pentacene-based OFET memory device with C60:c-PVP single floating-gate

Size: not specified

Medium/Support: none

References

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