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organic thin-film transistor

Based on

1 Articles
2014 Most recent source

Composition

1

silicon

Type Single Compound
Formula Si
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

Se-SQ-C4

Type Single Compound
Formula C31H32N4OSe2
Role channels
4

gold

Type Single Compound
Formula Au
Role electrodes
5

substoichiometric aluminum oxide

noncrystalline aluminum oxide anodized aluminum oxide aluminium suboxide oxidized aluminium aluminium oxide aluminum oxide alumina
Type
Formula AlO(x)
Role
6

1-tetradecanephosphonic acid

n-tetradecyl phosphonic acid 1-tetradecylphosphonic acid n-tetradecylphosphonic acid tetradecylphosphonic acid HC14-PA C14-PA TDPA TPA
Type
Formula C14H31O3P
Role

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
drain current

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Applications

Area Application Nanomaterial Variant Source
electronics

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Characterization

Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • substoichiometric aluminum oxide
  • Si/SiO2
Product

organic thin-film transistor

Size: not specified

Medium/Support: none

Method 2

Type: Physical formation
Source:
Starting materials
  • substoichiometric aluminum oxide
  • Si/SiO2
Product

organic thin-film transistor

Size: not specified

Medium/Support: none

References

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