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indium arsenide/gallium antimonide metal-oxide-semiconductor field-effect transistor

Based on

1 Articles
2015 Most recent source

Composition

1

crystalline silicon

c-Si cSi
Type Single Compound
Formula Si
Role substrate
2

tin-doped indium arsenide

Sn-doped InAs n++-InAs
Type Complex Compound
Formula
Role buffer layer
3

indium arsenide/gallium antimonide nanowire array

indium arsenide/gallium antimonide nanowires InAs/GaSb nanowires after digital etching InAs/GaSb nanowire array InAs/GaSb nanowires
Type Nano Material
Formula
Role semiconductor layer
4

S1828 photoresist

Type Polymer
Formula
Role spacer
5

aluminium oxide

aluminum oxide alumina
Type Single Compound
Formula Al2O3
Role gate dielectrics
6

tungsten

Type Single Compound
Formula W
Role gate
7

titanium/tungsten/gold trilayer

Ti/W/Au trilayer
Type Complex Compound
Formula
Role electrodes

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
drain current dependent on drain voltage

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Applications

Area Application Nanomaterial Variant Source
electronics

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Characterization

Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
Product

indium arsenide/gallium antimonide metal-oxide-semiconductor field-effect transistor

Size: not specified

Medium/Support: none

References

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