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few-layer graphene-based field-effect transistor

Based on

1 Articles
2014 Most recent source

Composition

1

heavily doped silicon

p++ Si
Type Complex Compound
Formula
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

few layer graphene

Type
Formula
Role
4

titanium/palladium/gold

Ti/Pd/Au
Type Nano Material
Formula
Role source
5

titanium/palladium/gold

Ti/Pd/Au
Type Nano Material
Formula
Role drain

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
drain current

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Applications

Area Application Nanomaterial Variant Source
electronics

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Characterization

Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
Product

few-layer graphene-based field-effect transistor

Size: not specified

Medium/Support: none

Method 2

Type: Physical formation
Source:
Starting materials
Product

few-layer graphene-based field-effect transistor

Size: not specified

Medium/Support: none

Method 3

Type: Physical formation
Source:
Starting materials
Product

few-layer graphene-based field-effect transistor

Size: not specified

Medium/Support: none

Method 4

Type: Physical formation
Source:
Starting materials
Product

few-layer graphene-based field-effect transistor

Size: not specified

Medium/Support: none

References

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