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MoS2-base hot-electron transistor

Based on

1 Articles
2015 Most recent source

Composition

1

degenerately doped silicon

n++ Si
Type Complex Compound
Formula
Role emitter
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role tunneling barriers
3

molybdenum disulfide monolayer

MoS2 nanosheets MoS2 monolayer
Type Nano Material
Formula
Role base
4

titanium(IV) oxide

titanium dioxide titanium oxide titania
Type
Formula TiO2
Role
5

hafnium(IV) oxide

hafnium dioxide hafnium oxide hafnia
Type Single Compound
Formula HfO2
Role filter barrier
6

tin-doped indium oxide

indium tin oxide ITO
Type Complex Compound
Formula
Role collector
7

titanium

Type Single Compound
Formula Ti
Role adhesion layer
8

gold

Type Single Compound
Formula Au
Role electrodes
9

aluminium/gold bilayer

Al/Au bilayer
Type Nano Material
Formula
Role electrodes

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
band energy diagram dependent on flat band condition

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Applications

Area Application Nanomaterial Variant Source
electronics

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Characterization

Method Nanomaterial Variant Source
optical microscopy

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Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • degenerately doped silicon
  • oxygen
Product

MoS2-base hot-electron transistor

Size: not specified

Medium/Support: none

References

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