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Ge/Si double quantum dot device

Based on

1 Articles
2014 Most recent source

Composition

1

silicon

Type Single Compound
Formula Si
Role substrate
2

hafnium(IV) oxide

hafnium dioxide hafnium oxide hafnia
Type Single Compound
Formula HfO2
Role dielectric layer
3

Ge/Si core/shell double quantum dot nanowires

germanium/silicon core-shell nanowires Ge/Si core/shell nanowires GeSi core-shell nanowires GeSi core-shell structure i-Ge/i-Si nanowires i-Ge/i-Si NW GeSi CSNW
Type
Formula
Role
4

aluminium

aluminum
Type Single Compound
Formula Al
Role source
5

aluminium

aluminum
Type Single Compound
Formula Al
Role drain
6

hafnium(IV) oxide

hafnium dioxide hafnium oxide hafnia
Type Single Compound
Formula HfO2
Role gate dielectrics
7

Au/Cr

Type Complex Compound
Formula
Role gate

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
double quantum dot spin relaxation time at singlet position

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Applications

Area Application Nanomaterial Variant Source
data storage

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Characterization

Biological effects

Preparation

References

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