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GaN-Al2O3-MoS2-Al2O3-graphene vertical heterojunction

Based on

1 Articles
2015 Most recent source

Composition

1

sapphire

Type Single Compound
Formula Al2O3
Role substrate
2

p-doped gallium nitride

p-GaN
Type Complex Compound
Formula
Role p-type semiconducting layer
3

aluminium oxide

aluminum oxide alumina
Type Single Compound
Formula Al2O3
Role dielectric layer
4

tungsten diselenide multilayer

WSe2 multilayer WSe2 flake
Type Nano Material
Formula
Role n-type semiconductor layer
5

graphene nanosheets

graphene sheets graphene
Type Nano Material
Formula
Role electrodes
6

titanium

Type Single Compound
Formula Ti
Role adhesion layer
7

gold

Type Single Compound
Formula Au
Role electrodes
8

palladium

Type Single Compound
Formula Pd
Role adhesion layer

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
emission

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Applications

Area Application Nanomaterial Variant Source
optoelectronics

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Characterization

Method Nanomaterial Variant Source
electroluminescence

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Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
Product

GaN-Al2O3-MoS2-Al2O3-graphene vertical heterojunction

Size: not specified

Medium/Support: none

Method 2

Type: Physical formation
Source:
Starting materials
Product

GaN-Al2O3-MoS2-Al2O3-graphene vertical heterojunction

Size: not specified

Medium/Support: none

References

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