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top-gate field-effect transistor

Based on

1 Articles
2015 Most recent source

Composition

1

sapphire

Type Single Compound
Formula Al2O3
Role substrate
2

single-crystalline triangular WSe2 monolayer

WSe2 single crystal monolayer tungsten selenide monolayer monolayer tungsten selenide monolayer WSe2 triangles WSe2 nanoflakes WSe2 nanosheets WSe2 monolayer monolayer WSe2 WSe2 triangles
Type
Formula
Role
3

palladium

Type
Formula Pd
Role
4

nickel

Type Single Compound
Formula Ni
Role source
5

nickel

Type Single Compound
Formula Ni
Role drain
6

hafnium(IV) oxide

hafnium dioxide hafnium oxide hafnia
Type Single Compound
Formula HfO2
Role gate dielectrics
7

tin-doped indium oxide

indium tin oxide ITO
Type Complex Compound
Formula
Role gate contact

Properties

General physical and chemical properties

Property Value Source
drain current dependent on gate voltage

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Applications

Area Application Source
electronics

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Characterization

Biological effects

Preparation

References

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