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all-oxide thin-film transistor

Based on

1 Articles
2015 Most recent source

Composition

1

polyimide

Type Polymer
Formula
Role substrate
2

zinc oxide (wurtzite)

wurtzite zinc oxide zinc oxide wurtzite
Type Single Compound
Formula ZnO
Role channels
3

degeneratively doped zinc oxide

Type Complex Compound
Formula
Role source layer
4

degeneratively doped zinc oxide

Type Complex Compound
Formula
Role drain layer
5

tin-doped indium oxide

indium tin oxide ITO
Type Complex Compound
Formula
Role source layer
6

tin-doped indium oxide

indium tin oxide ITO
Type Complex Compound
Formula
Role drain layer
7

zirconium(IV) oxide

zirconium dioxide zirconia
Type Single Compound
Formula ZrO2
Role gate dielectrics
8

tin-doped indium oxide

indium tin oxide ITO
Type Complex Compound
Formula
Role gate

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
drain current

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Applications

Area Application Nanomaterial Variant Source
electronics

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Characterization

Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • zinc
  • polyimide
  • oxygen
  1. AgiRE00wxq
Product

all-oxide thin-film transistor

Size: not specified

Medium/Support: none

References

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