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n+-gallium arsenide nanowires/p+-silicon heterojunction

Based on

1 Articles
2015 Most recent source

Composition

1

titanium/palladium/silver electrode

Type Complex Compound
Formula
Role electrodes
2

boron-doped silicon

p+-type Si
Type Complex Compound
Formula
Role substrate
3

n+-gallium arsenide nanowires

n+-GaAs nanowires
Type Nano Material
Formula
Role conducting layer
4

benzocyclobutene

BCB
Type Polymer
Formula
Role insulators
5

germanium-gold-nickel electrode

Type Complex Compound
Formula
Role Ohmic contacts

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
current density dependent on doping

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Applications

Area Application Nanomaterial Variant Source
electronics

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Characterization

Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • boron-doped silicon
Product

n+-gallium arsenide nanowires/p+-silicon heterojunction

Size: not specified

Medium/Support: none

References

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