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nanodevice based on (indium gallium arsenide nanowire/indium gallium arsenide nanowire/hafnium oxide/aluminum oxide/hafnium oxide/aluminum oxide/indium gallium arsenide/indium gallium arsenide/titanium/palladium/gold/titanium/palladium/gold/titanium/palladium/gold/titanium/palladium/gold/titanium/palladium/gold/titanium/palladium/gold/indium(III) phosphide/indium(III) phosphide)

Based on

1 Articles
2015 Most recent source

Composition

1

indium(III) phosphide

indium phosphide
Type Single Compound
Formula InP
Role substrate
2

indium gallium arsenide nanowire

In0.85Ga0.15As nanowire
Type Nano Material
Formula
Role channel layer
3

indium gallium arsenide

Type
Formula In0.63Ga0.37As
Role
4

titanium/palladium/gold

Ti/Pd/Au
Type Complex Compound
Formula
Role drain
5

titanium/palladium/gold

Ti/Pd/Au
Type Complex Compound
Formula
Role source
6

hafnium oxide/aluminum oxide

hafnia/alumina
Type Complex Compound
Formula
Role gate dielectrics
7

titanium/palladium/gold

Ti/Pd/Au
Type Complex Compound
Formula
Role gate

Properties

General physical and chemical properties

Property Value Source
conductance dependent on drain voltage

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Applications

Area Application Source
electronics

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Characterization

Biological effects

Preparation

References

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