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PDPP-TVT-based thin film transistor

Based on

1 Articles
2015 Most recent source

Composition

1

n-doped silicon

n-type silicon N-type silicon n-doped Si silicon
Type Single Compound
Formula Si
Role gate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role gate dielectrics
3

n-octadecyltrimethoxylsilane

n-octadecyltrimethoxysilane trimethoxy(octadecyl)silane noctadecyltrimethoxysilane octadecyltrimethoxy silane octadecyltrimethoxylsilane octadecyltrimethoxysilane trimethoxyoctadecylsilane C18TMOS C18TMS C18TMS n-ODMS ODTMS OTMOS TMOS OTMS ODTS ODMS TMS OTS ODS
Type
Formula C18H37Si(OCH3)3
Role
4

polymer

Type Polymer
Formula
Role channel layer
5

gold

Type Single Compound
Formula Au
Role source
6

gold

Type Single Compound
Formula Au
Role drain

Properties

General physical and chemical properties

Property Value Source
drain current dependent on preparation conditions

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Applications

Area Application Source
electronics

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Characterization

Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • n-octadecyltrimethoxylsilane
  • Si wafer
Product

PDPP-TVT-based thin film transistor

Method 2

Type: Physical formation
Source:
Starting materials
  • n-octadecyltrimethoxylsilane
  • Si wafer
Product

PDPP-TVT-based thin film transistor

References

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