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CoFe2O4 NP-based nano-floating gate memory device

Based on

1 Articles
2015 Most recent source

Composition

1

n-doped silicon

n-Si
Type Complex Compound
Formula
Role substrate
2

silicon dioxide

silicic oxide silica
Type
Formula SiO2
Role
3

n-octadecyltrimethoxylsilane

n-octadecyltrimethoxysilane trimethoxy(octadecyl)silane noctadecyltrimethoxysilane octadecyltrimethoxy silane octadecyltrimethoxylsilane octadecyltrimethoxysilane trimethoxyoctadecylsilane C18TMOS C18TMS C18TMS n-ODMS ODTMS OTMOS ODMS ODTS OTMS TMOS ODS OTS TMS
Type Single Compound
Formula C18H37Si(OCH3)3
Role layer
4

cobalt ferrite nanoparticles

CoFe2O4 nanoparticles
Type Nano Material
Formula
Role charge trap site
5

pentacene

Type Single Compound
Formula C22H14
Role semiconductor layer
6

gold

Type Single Compound
Formula Au
Role source
7

gold

Type Single Compound
Formula Au
Role drain

Properties

General physical and chemical properties

Property Value Source
charge carrier mobility

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Applications

Area Application Source
data storage

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Characterization

Method Source
atomic force microscopy

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Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • silicon dioxide
  • n-doped silicon
  1. SpDoUeDw75wzSqm3ap6UU63oBP0Oy5ThH9X4dH5N9opsF74hrayPtDgRpzwMT7HHV
Product

CoFe2O4 NP-based nano-floating gate memory device

Method 2

Type: Physical formation
Source:
Starting materials
  • silicon dioxide
  • n-doped silicon
  1. hbaa06bRqFkm3s6HjTj08qm355glNZIRGWAq0C5Oe0BnMuoCRAUcy3oCIoWkh9xSK
Product

CoFe2O4 NP-based nano-floating gate memory device

Method 3

Type: Physical formation
Source:
Starting materials
  • silicon dioxide
  • n-doped silicon
  1. e3LXugALziTb5FBf2QIHaRxC6qZHhwyiM1itaAlysGAXUQRMAA4GnX2RmyeTORcXP
Product

CoFe2O4 NP-based nano-floating gate memory device

References

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