Loading ...

Fast insight into nanotechnology

Access easily searchable nanoscience data, synthesis methods and literature

CoFe2O4 NP-based nano-floating gate memory device

Based on

1 Articles
2015 Most recent source

Composition

1

n-doped silicon

n-Si
Type Complex Compound
Formula
Role substrate
2

silicon dioxide

silicic oxide silica
Type
Formula SiO2
Role
3

n-octadecyltrimethoxylsilane

n-octadecyltrimethoxysilane trimethoxy(octadecyl)silane noctadecyltrimethoxysilane octadecyltrimethoxy silane octadecyltrimethoxylsilane octadecyltrimethoxysilane trimethoxyoctadecylsilane C18TMOS C18TMS C18TMS n-ODMS ODTMS OTMOS ODMS ODTS OTMS TMOS ODS OTS TMS
Type Single Compound
Formula CH3(CH2)17Si(OCH3)3
Role layer
4

cobalt ferrite nanoparticles

CoFe2O4 nanoparticles
Type Nano Material
Formula
Role charge trap site
5

pentacene

Type Single Compound
Formula C22H14
Role semiconductor layer
6

gold

Type Single Compound
Formula Au
Role source
7

gold

Type Single Compound
Formula Au
Role drain

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
charge carrier mobility

More information/entries available to subscribers only.

Or, view sample content

Applications

Area Application Nanomaterial Variant Source
data storage

More information available to subscribers only.

Or, view sample content

Characterization

Method Nanomaterial Variant Source
atomic force microscopy

More information/entries available to subscribers only.

Or, view sample content

Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • silicon dioxide
  • n-doped silicon
  1. vuWWAal6lHitsew87uUOa8FVHGJwPShPxOCj7hUhcWyNd1pcxKhujeA60QLUXxQRL
Product

CoFe2O4 NP-based nano-floating gate memory device

Size: not specified

Medium/Support: none

Method 2

Type: Physical formation
Source:
Starting materials
  • silicon dioxide
  • n-doped silicon
  1. Zkxj7xe5MWmqeHqG23vjPjT1oVYaFjj3NXKrLIR7x39nRa1RQgeqsLD49Vra2nUgc
Product

CoFe2O4 NP-based nano-floating gate memory device

Size: not specified

Medium/Support: none

Method 3

Type: Physical formation
Source:
Starting materials
  • silicon dioxide
  • n-doped silicon
  1. djP2C3fLaCawaD5tmJRO4kmAyot8gMSIVMuS78F1rr7sKtfawTyBs1v7JMrDeUh3Q
Product

CoFe2O4 NP-based nano-floating gate memory device

Size: not specified

Medium/Support: none

References

Full content is available to subscribers only

To view content please choose from the following:

We use cookies to improve your experience with our site. More information

Sign up for a free trial