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GaN-based light emitting diode

Based on

1 Articles
2015 Most recent source

Composition

1

sapphire

Type Single Compound
Formula Al2O3
Role substrate
2

gallium nitride

Type Single Compound
Formula GaN
Role buffer layer
3

silicon-doped gallium nitride

n-GaN
Type Complex Compound
Formula
Role layer
4

In0.2Ga0.8N/GaN

Type Nano Material
Formula
Role active layer
5

Al0.15Ga0.85N

Type Single Compound
Formula Al0.15Ga0.85N
Role hole transport layer
6

Mg-doped GaN

p-GaN
Type
Formula
Role
7

Cr/Pt/Au

Type Nano Material
Formula
Role electrodes

Properties

General physical and chemical properties

Property Value Source
light output power

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Applications

Area Application Source
optoelectronics

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Characterization

Method Source
electroluminescence

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Biological effects

Preparation

References

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