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InGaN quantum well nanowire light-emitting diode

Based on

1 Articles
2015 Most recent source

Composition

1

SiO2/Si

Type Complex Compound
Formula
Role substrate
2

molybdenum

Type
Formula Mo
Role
3

graded aluminium gallium nitride nanowires

graded AlGaN nanowires
Type Nano Material
Formula
Role p-type, n-type and active layer
4

titanium

Type Single Compound
Formula Ti
Role adhesion layer
5

gold

Type Single Compound
Formula Au
Role anode
6

gold

Type Single Compound
Formula Au
Role current spreading layer
7

indium

Type Single Compound
Formula In
Role cathode

Properties

General physical and chemical properties

Property Value Source
current density

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Applications

Area Application Source
optoelectronics

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Characterization

Method Source
electroluminescence dependent on current density

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Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Product

InGaN quantum well nanowire light-emitting diode

References

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