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dual-gated WSe2-based field-effect transistor

Based on

1 Articles
2015 Most recent source

Composition

1

silicon

Type Single Compound
Formula Si
Role bottom gate
2

silicon dioxide

silicic oxide silica
Type
Formula SiO2
Role
3

chromium

Type Single Compound
Formula Cr
Role adhesion layer
4

platinum

Type Single Compound
Formula Pt
Role drain
5

WSe2 flakes

Type Nano Material
Formula
Role channel layer
6

hexagonal boron nitride flakes

hBN flakes
Type Nano Material
Formula
Role top gate dielectric
7

palladium

Type Single Compound
Formula Pd
Role upper gate
8

platinum

Type Single Compound
Formula Pt
Role source

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
channel conductivity dependent on temperature

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Applications

Area Application Nanomaterial Variant Source
electronics

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Characterization

Method Nanomaterial Variant Source
optical microscopy

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Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • SiO2/Si substrate
  • chromium
  • platinum
Product

dual-gated WSe2-based field-effect transistor

Size: not specified

Medium/Support: none

References

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