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1-L MoS2/h-BN/p-GaN semiconductor-insulator-semiconductor heterojunction diode

Based on

1 Articles
2015 Most recent source

Composition

1

sapphire

Type Single Compound
Formula Al2O3
Role substrate
2

p-doped gallium nitride

p-GaN
Type Complex Compound
Formula
Role semiconductor layer
3

hBN film

Type
Formula
Role
4

molybdenum sulfide nanosheets

MoS2 monolayer flakes MoS2 nanosheets MoS2 flakes
Type Nano Material
Formula
Role semiconductor layer
5

Cr/Au

Type Complex Compound
Formula
Role electrodes

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
current density

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Applications

Area Application Nanomaterial Variant Source
electronics

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Characterization

Method Nanomaterial Variant Source
optical microscopy

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Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • ammonia
  • trimethanidogallium
  • sapphire
  1. 56GM8PqlvoZq
Product

1-L MoS2/h-BN/p-GaN semiconductor-insulator-semiconductor heterojunction diode

Size: not specified

Medium/Support: none

References

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