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reduced graphene oxide field-effect transistor

Based on

1 Articles
2015 Most recent source

Composition

1

silicon

Type Single Compound
Formula Si
Role substrate
2

silicon dioxide

silicic oxide silica
Type
Formula SiO2
Role
3

reduced graphene oxide

RGO
Type
Formula
Role
4

chromium

Type Single Compound
Formula Cr
Role adhesion layer
5

gold

Type Single Compound
Formula Au
Role source
6

gold

Type Single Compound
Formula Au
Role drain
7

Ag/AgCl

Type Complex Compound
Formula
Role gate electrode
8

3-aminopropyltriethoxysilane

APTES
Type Single Compound
Formula C9H23NO3Si
Role monolayer
9

1-pyrenebutanoic acid N-hydroxysuccinimidyl ester

1-pyrenebutyric acid N-hydroxysuccinimide ester pyrenebutyric acid N-hydroxysuccinimide ester 1-pyrenebutanoic acid succinimidyl ester pyrenebutyric acid succinimide ester PBA-NHS PBASE PASE PBSE PSE
Type Single Compound
Formula C24H19NO4
Role linker
10

OBP14

Type Biomolecule
Formula
Role receptor

Properties

Sensor properties

Type of sensor Sensor property Source

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Applications

Area Application Source

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Characterization

Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • silicon dioxide
  • silicon
  • 3-aminopropyltriethoxysilane
  1. XDRzH93rWiIaMGtD
Product

reduced graphene oxide field-effect transistor

References

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