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single-stack graphene resisitive random access memory

Based on

1 Articles
2015 Most recent source

Composition

1

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role substrate
2

aluminium oxide

aluminum oxide alumina
Type Single Compound
Formula Al2O3
Role dielectric layer
3

graphene nanosheets

graphene sheets graphene
Type Nano Material
Formula
Role plane electrode
4

titanium

Type Single Compound
Formula Ti
Role adhesion layer
5

platinum

Type Single Compound
Formula Pt
Role electrodes
6

silicon dioxide

silicic oxide silica
Type
Formula SiO2
Role
7

aluminium oxide

aluminum oxide alumina
Type Single Compound
Formula Al2O3
Role dielectric layer
8

hafnium sub-oxide

hafnium suboxide hafnium oxide hafnia HfOx
Type Single Compound
Formula HfO(x)
Role active resistive switching layer
9

titanium nitride

Type Single Compound
Formula TiN
Role pillar electrode

Properties

General physical and chemical properties

Property Value Source
electric current

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Applications

Area Application Source
data storage

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Characterization

Method Source
high-resolution transmission electron microscopy

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Biological effects

Preparation

Method 1

Type: Physical formation
Source:
Starting materials
  • silicon dioxide
  • aluminium oxide
Product

single-stack graphene resisitive random access memory

References

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