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ZnO-stitched graphene-based top-gated field effect transistor

Based on

1 Articles
2015 Most recent source

Composition

1

p-doped silicon

p-doped Si
Type Complex Compound
Formula
Role substrate
2

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role substrate
3

ZnO-stitched graphene film

Type Nano Material
Formula
Role channels
4

gold

Type Single Compound
Formula Au
Role source
5

gold

Type Single Compound
Formula Au
Role drain
6

cross-linked poly(4-vinylphenol)

Type Polymer
Formula
Role seed layer
7

aluminium oxide

aluminum oxide alumina
Type Single Compound
Formula Al2O3
Role gate dielectrics
8

gold

Type Single Compound
Formula Au
Role gate

Properties

General physical and chemical properties

Property Value Source

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Applications

Area Application Source

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Characterization

Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
  1. fJL3vEvawZd
  2. yOkXm0UKrKxo9amtFVQyo
Product

ZnO-stitched graphene-based top-gated field effect transistor

References

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