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ferroelectric CMOS memory circuit

Based on

1 Articles
2015 Most recent source

Composition

1

p-doped silicon

p-doped Si
Type Complex Compound
Formula
Role bottom gate
2

silicon dioxide

silicic oxide silica
Type
Formula SiO2
Role
3

black phosphorus nanosheets

BP nanosheets
Type Nano Material
Formula
Role channel layer
4

titanium

Type Single Compound
Formula Ti
Role adhesion layer
5

gold

Type Single Compound
Formula Au
Role source
6

gold

Type Single Compound
Formula Au
Role drain
7

poly(vinylidenefluoride-trifluoroethylene)

P(VDF-TrFE)
Type Polymer
Formula
Role top gate dielectric
8

aluminium

aluminum
Type Single Compound
Formula Al
Role upper gate
9

molybdenum sulfide nanosheets

MoS2 nanosheets
Type Nano Material
Formula
Role channel layer

Properties

General physical and chemical properties

Property Value Nanomaterial Variant Source
maximum linear mobility

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Applications

Area Application Nanomaterial Variant Source
data storage

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Characterization

Biological effects

Preparation

References

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