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SWCNT-based field-effect transistor

Based on

1 Articles
2015 Most recent source

Composition

1

p-doped silicon

p-doped Si silicon p-Si
Type Single Compound
Formula Si
Role substrate
2

aluminium oxide

aluminum oxide alumina
Type Single Compound
Formula Al2O3
Role source
3

single-walled carbon nanotubes

single-walled carbon nanotubes single-wall carbon nanotubes SWCNT SWNT
Type Nano Material
Formula
Role channel layer
4

Ti/Pd film

Type Nano Material
Formula
Role drain
5

Ti/Pd film

Type Nano Material
Formula
Role source
6

aluminium oxide

aluminum oxide alumina
Type Single Compound
Formula Al2O3
Role gate dielectrics
7

titanium-gold layer

Ti/Au film
Type Nano Material
Formula
Role gate

Properties

General physical and chemical properties

Property Value Source
drain current

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Applications

Area Application Source
electronics

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Characterization

Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
  • trimethylaluminium
  • p-doped silicon
Product

SWCNT-based field-effect transistor

Method 2

Type: Chemical synthesis
Source:
Starting materials
  • trimethylaluminium
  • p-doped silicon
Product

SWCNT-based field-effect transistor

References

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