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InGaN/GaN quantum-disk-in-nanowire based light emitting diode

Based on

1 Articles
2015 Most recent source

Composition

1

aluminium

aluminum
Type Single Compound
Formula Al
Role n-type contact
2

n-doped silicon

n-Si
Type Complex Compound
Formula
Role substrate
3

InGaN/GaN disk-in-nanowire

Type Nano Material
Formula
Role active layer
4

perylene

Type Single Compound
Formula C20H12
Role surface passivation layer
5

silicon dioxide

silicic oxide silica
Type Single Compound
Formula SiO2
Role dielectric layer
6

Ni/ITO film

Type Nano Material
Formula
Role p-type contact
7

Ti/Au film

Type Nano Material
Formula
Role current spreading layer

Properties

General physical and chemical properties

Property Value Source
electric current dependent on passivation

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Applications

Area Application Source
electronics

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Characterization

Method Source
electroluminescence

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Biological effects

Preparation

Method 1

Type: Chemical synthesis
Source:
Starting materials
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Product

InGaN/GaN quantum-disk-in-nanowire based light emitting diode

References

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